Method and apparatus of growing a thin film onto a substrate

Details Method and apparatus of growing a thin film onto a substrate Method and apparatus of growing a thin film onto a substrate

2006-09-12

2006-09-12

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S088000, C117S089000, C117S093000, C117S102000

Reexamination Certificate

active

07105054

ABSTRACT:
A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding the reactants employed in a thin-film growth process in the form of vapor-phase pulses into said reaction chamber; at least one outlet channel communicating with said reaction chamber, said outlet channel being suited for the outflow of reaction products and excess amounts of reactants from said reaction space; and a pre-reaction chamber arranged immediately upstream of the reaction chamber, said pre-reaction chamber forming a first reaction zone, in which the reactants of successive vapor-phase pulses can be reacted with each other in the vapor phase to form a solid product, whereas said reaction chamber forming a second reaction zone can be operated under conditions conducive to ALD growth of a thin film.

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