High K dielectric film

Details High K dielectric film High K dielectric film

2006-09-12

2006-09-12

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S382000

Reexamination Certificate

active

07105886

ABSTRACT:
A dielectric layer comprised of lanthanum, lutetium, and oxygen that is formed between two conductors or a conductor and a substrate. In one embodiment, the dielectric layer is formed over the substrate without the need for an additional interfacial layer. In another embodiment, the dielectric layer is graded with respect to the lanthanum or lutetium content or in the alternative, may include aluminum. In yet another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer or between both the conductor and substrate and the dielectric layer. The dielectric layer is preferably formed by molecular beam epitaxy, but can also be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.

REFERENCES:
patent: 6531354 (2003-03-01), Maria et al.
patent: 6541280 (2003-04-01), Kaushik et al.
patent: 2004/0211998 (2004-10-01), Araujo et al.
Ovanesyan, K.L. et al., “Czochralski single crystal growth of Ce- and Pr-doped LaLuO3double oxide,” Journal of Crystal Growth 198/199 (1999), pp. 497-500, Elsevier Science B.V.
Ovanesyan, K.L. et al., “Single crystal growth and characterization of LaLuO3,” OPTICAL Materials, Sep. 1998, pp. 291-295, Elsevier Science B.V.

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