Thin film capacitive element, method for producing same and...

Details Thin film capacitive element, method for producing same and... Thin film capacitive element, method for producing same and...

2006-04-11

2006-04-11

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S516000

Reexamination Certificate

active

07026680

ABSTRACT:
An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba(1-y)(1-x)Sr(1-y)xYy)Ti1+zO3+δwith the range 0<x<1, 0.007<y<0.02, −1<δ<0.5, and (Ba(1-y)(1-x)+Sr(1-y)x)/Ti1+z<1, and an upper electrode. An electronic device comprising the capacitive element of the present invention is also disclosed.

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