Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-09-19

2006-09-19

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S482000, C438S487000

Reexamination Certificate

active

07109073

ABSTRACT:
To provide technology that allows, by controlling a crystal orientation, forming a crystalline semiconductor film aligned in orientation and obtaining a crystalline semiconductor film whose impurity concentration is reduced.On an insulating surface, a first semiconductor region made of an amorphous semiconductor is formed, a continuous wave laser beam is scanned from one end of the first semiconductor region to the other end thereof, thereby the first semiconductor region is once melted and crystallized, thereafter in order to form an active layer of a TFT the first semiconductor region is etched, and thereby a second semiconductor region is formed. In a pattern of the second semiconductor region formed by the etching, in order to improve a field-effect mobility in the TFT, a scanning direction of the laser beam is allowed roughly coinciding with a channel length direction in a thin film transistor.

REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4536231 (1985-08-01), Kasten
patent: 4822752 (1989-04-01), Sugahara et al.
patent: 5336879 (1994-08-01), Sauer
patent: 5432122 (1995-07-01), Chae
patent: 5521107 (1996-05-01), Yamazaki et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5650636 (1997-07-01), Takemura et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5729308 (1998-03-01), Yamazaki et al.
patent: 5789763 (1998-08-01), Kato et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5929464 (1999-07-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5956603 (1999-09-01), Talwar et al.
patent: 5976959 (1999-11-01), Huang
patent: 5981974 (1999-11-01), Makita
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6100860 (2000-08-01), Takayama et al.
patent: 6204099 (2001-03-01), Kusumoto et al.
patent: 6232156 (2001-05-01), Ohtani et al.
patent: 6242289 (2001-06-01), Nakajima et al.
patent: 6265745 (2001-07-01), Kusumoto et al.
patent: 6417031 (2002-07-01), Ohtani et al.
patent: 6417896 (2002-07-01), Yamazaki et al.
patent: 6465268 (2002-10-01), Hirakata et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6479837 (2002-11-01), Ogawa et al.
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6509212 (2003-01-01), Zhang et al.
patent: 6515428 (2003-02-01), Yeh et al.
patent: 6552768 (2003-04-01), Matsuda
patent: 6556711 (2003-04-01), Koga
patent: 6582996 (2003-06-01), Hara et al.
patent: 6646288 (2003-11-01), Yamazaki et al.
patent: 6661180 (2003-12-01), Koyama
patent: 6709905 (2004-03-01), Kusumoto et al.
patent: 6730550 (2004-05-01), Yamazaki et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 6743650 (2004-06-01), Hirakata et al.
patent: 2001/0045563 (2001-11-01), Kusumoto et al.
patent: 2001/0051398 (2001-12-01), Hirakata et al.
patent: 2002/0014623 (2002-02-01), Kusumoto et al.
patent: 2002/0097350 (2002-07-01), Haven et al.
patent: 2003/0016196 (2003-01-01), Lueder et al.
patent: 2003/0017634 (2003-01-01), Hirakata et al.
patent: 2003/0024905 (2003-02-01), Tanaka
patent: 2003/0025166 (2003-02-01), Yamazaki et al.
patent: 2003/0047732 (2003-03-01), Yamazaki et al.
patent: 2003/0052336 (2003-03-01), Yamazaki et al.
patent: 2003/0059990 (2003-03-01), Yamazaki et al.
patent: 2003/0062845 (2003-04-01), Yamazaki et al.
patent: 2003/0075733 (2003-04-01), Yamazaki et al.
patent: 2003/0100169 (2003-05-01), Tamaka et al.
patent: 2004/0106237 (2004-06-01), Yamazaki
patent: 0878789 (1998-11-01), None
patent: 1045447 (2000-10-01), None
patent: 1 058 311 (2000-12-01), None
patent: 52-104117 (1987-05-01), None
patent: 02-140915 (1990-05-01), None
patent: 02-181419 (1990-07-01), None
patent: 06-289431 (1994-10-01), None
patent: 07-092501 (1995-04-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-319907 (1998-12-01), None
patent: 10-339889 (1998-12-01), None
patent: 11-271731 (1999-10-01), None
patent: 2000-221907 (2000-08-01), None
patent: 2000-356788 (2000-12-01), None
patent: 409293 (2000-10-01), None
patent: WO-00-13213 (2000-03-01), None
Hara et al., “Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization”, pp. 227-230, 2001, AM-LCD, TFT3-1.
Takeuchi et al., “Performance of Poly-Si TFTs Fabricated by a Stable Scanning CW Laser Crystallization”, pp. 251-254, 2001, AM-LCD, TFT4-3.
Specifications and Drawings for U.S. Appl. No. 09/633,869.
U.S. Appl. No. 10/238,050; filed Sep. 10, 2002 “Light Emitting Device and Method of Manufacturing Semiconductor Device” (Filing Receipt, Specification, Claims and Drawings).
U.S. Appl. No. 10/224,628; filed Aug. 21, 2002 “Method for Manufacturing Semiconductor Device” (Filing Receipt, Specification, Claims and Drawings).
“Society for Information Display International Symposium Digest of Technical Papers” (SID) Inukai et al., Jan. 1, 2000, pp. 924-927.
U.S. Appl. No. 09/633,869; filed Aug. 7, 2000; Hongyong Zhang et al. “Method for Laser Processing Semiconductor Device”.

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