Magnetoresistive (MR) magnetic data storage device with...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257S296000

Reexamination Certificate

active

07042032

ABSTRACT:
A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.

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patent: 6358756 (2002-03-01), Sandhu et al.
patent: 6392922 (2002-05-01), Liu et al.
patent: 6413788 (2002-07-01), Tuttle
patent: 6781173 (2004-08-01), Tuttle et al.
patent: 2002/0030489 (2002-03-01), Lenssen et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.

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