Decreasing the residue of a silicon dioxide layer after...

Details Decreasing the residue of a silicon dioxide layer after... Decreasing the residue of a silicon dioxide layer after...

2006-05-30

2006-05-30

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S694000, C438S638000

Reexamination Certificate

active

07053004

ABSTRACT:
A semiconductor device is formed using a BARC (bottom antireflective coating) that minimizes the formation of fences around the via holes. The BARC is formed from an organic antireflective layer over an inorganic antireflective layer. The organic antireflective layer also covers the internal surface of the via hole. Subsequent treatment with dilute aqueous or organic solvent leaves a thinned organic antireflective layer and a plug of organic material at the bottom of the via hole. The resulting semiconductor is free from the via hole fence formation that characterizes the conventional art technology.

REFERENCES:
patent: 6376572 (2002-04-01), Turri
patent: 6391472 (2002-05-01), Lamb et al.
patent: 6809033 (2004-10-01), Hui et al.
patent: 2005/0054194 (2005-03-01), Tsai et al.

Affiliated with

Also associated with

Rating

Decreasing the residue of a silicon dioxide layer after... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Decreasing the residue of a silicon dioxide layer after..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Decreasing the residue of a silicon dioxide layer after... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3564480