Method for forming metal interconnect in a carbon containing...

Details Method for forming metal interconnect in a carbon containing... Method for forming metal interconnect in a carbon containing...

2006-04-18

2006-04-18

Mai, Anh Duy (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000

Reexamination Certificate

active

07030009

ABSTRACT:
An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

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Notice of Reasons of Rejection Dated Mar. 30, 2004.

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