Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C257S372000, C257S394000
Reexamination Certificate
active
07009255
ABSTRACT:
A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gate insulating layer is formed on the first semiconductor layer and the substrate. Two gate electrodes are formed on the gate insulating layer such that the trench is located in between two gate electrodes. First and second impurity regions are formed in the substrate on both sides of each of the gate electrodes. Since the doped layer is locally formed in the trench area, the source and drain regions are completely separated from the heavily doped layer to weaken the electric field of PN junction, thereby improving refresh and preventing punchthrough between the source and drain.
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Kim Ji-Young
Son Nak-Jin
Duy Mai Anh
Marger & Johnson & McCollom, P.C.
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