Semiconductor device containing a dummy wire

Details Semiconductor device containing a dummy wire Semiconductor device containing a dummy wire

2006-05-09

2006-05-09

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S758000, C257S635000, C257S762000, C257S763000, C257S764000, C257S775000, C257S700000, C257S701000, C257S751000, C257S767000, C257S776000, C257S306000, C257S295000, C257S296000, C257S752000

Reexamination Certificate

active

07042099

ABSTRACT:
There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

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