Semiconductor device having superlattice semiconductor layer...

Details Semiconductor device having superlattice semiconductor layer... Semiconductor device having superlattice semiconductor layer...

2006-01-31

2006-01-31

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S013000, C257S097000

Reexamination Certificate

active

06992318

ABSTRACT:
Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.

REFERENCES:
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patent: 6060335 (2000-05-01), Rennie et al.
patent: 6573527 (2003-06-01), Sugiyama et al.
patent: 2001/0030317 (2001-10-01), Lee et al.
patent: 2001-308458 (2001-11-01), None
patent: 2002-111131 (2002-04-01), None

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