Metal gate structure for MOS devices

Details Metal gate structure for MOS devices Metal gate structure for MOS devices

2006-04-11

2006-04-11

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S412000

Reexamination Certificate

active

07026689

ABSTRACT:
A gate structure includes a gate dielectric layer disposed on a semiconductor substrate. A metal gate conductor is disposed on the gate dielectric layer. A cap layer is disposed on the metal gate conductor. At least one spacer covers sidewalls of the metal gate conductor and the cap layer, such that the cap layer and the spacer encloses the metal gate conductor layer therein. At least one self-aligned contact structure formed next to the metal gate conductor on the semiconductor substrate. As such, the cap layer and the spacer separate the self-aligned contact structure from directly contacting the metal gate conductor.

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