Method of identifying defect distribution in silicon single...

Details Method of identifying defect distribution in silicon single... Method of identifying defect distribution in silicon single...

2006-07-11

2006-07-11

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S015000, C117S020000, C117S202000, C117S932000

Reexamination Certificate

active

07074271

ABSTRACT:
A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. Recombination lifetimes associated with the transition metal are measured in the entire heat-treated measurement sample, and the values measured are checked against the correlation line to infer the region [Pv] and the region [Pi] as well as the boundary thereof in the measurement sample.

REFERENCES:
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patent: 6638357 (2003-10-01), Mule′Stagno et al.
patent: 2001/0025597 (2001-10-01), Falster et al.
patent: 2003/0116081 (2003-06-01), Falster et al.
patent: 2004/0025782 (2004-02-01), Falster et al.
patent: 2005/0238905 (2005-10-01), Falster et al.

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