Magnetic random access memory device

Details Magnetic random access memory device Magnetic random access memory device

2006-07-18

2006-07-18

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S157000, C365S171000, C365S209000, C365S213000

Reexamination Certificate

active

07079414

ABSTRACT:
A memory cell array is constructed by two-dimensionally arranging a plurality of memory cells each composed of a magnetoresistive element, in a row and column directions. Write word lines are provided along the row direction of the memory cell array. Write bit lines are provided along the column direction of the memory cell array. To write data, a pulse-like write current is applied to an appropriate word and bit lines to generate magnetic fields in the column and row directions. A combined magnetic field of the magnetic fields in the column and row directions is applied to a memory cell to write data. A control circuit controls the pulse width of the pulse-like write current applied to the word and bit lines so that the pulse width has a predetermined temperature dependence.

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