Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-09-19
2006-09-19
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S171000, C365S158000
Reexamination Certificate
active
07110290
ABSTRACT:
Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same structure as the memory cell, except that the state change portion is additionally provided thereto. As such, the program cell can be provided efficiently, as it can be designed the same as the memory cell in terms of the magnetic storage portion and others. The state change portion makes a transition to a fixed state based on an electrical change. Thus, the state change portion prevents program information from being rewritten by a magnetic noise or the like, and ensures stable storage of the program information.
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Buchanan & Ingersoll & Rooney PC
Phung Anh
Renesas Technology Corp.
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