Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-21
2006-03-21
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000, C438S487000, C438S490000
Reexamination Certificate
active
07015079
ABSTRACT:
By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.
REFERENCES:
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5683937 (1997-11-01), Furukawa et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5880487 (1999-03-01), Furukawa et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6777274 (2004-08-01), Moon et al.
patent: 07-183540 (1995-07-01), None
patent: 08-078329 (1996-03-01), None
patent: 10-106951 (1998-04-01), None
patent: 2001-60551 (2001-03-01), None
Katsuyuki Suga et al., “P-3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films,” SID 00 DIGEST, pp. 534-537.
Makita Naoki
Matsuo Takuya
Miyairi Hidekazu
Nomura Katsumi
Shiga Aiko
Brewster William M.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor film, semiconductor device, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor film, semiconductor device, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor film, semiconductor device, and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3560640