Semiconductor device and method of manufacture thereof with...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S760000, C257S786000

Reexamination Certificate

active

07071561

ABSTRACT:
A semiconductor device having a first bond pad and at least one second bond pad coupled to each input/output cell. The first bond pads comprise a first pattern, and the at least one second bond pad comprise at least one second pattern, wherein the at least one second pattern is different from or the same as the first pattern. Either the first bond pads, the at least one second bond pad, or both, may be used to electrically couple the input/output cells of the semiconductor device to leads of an integrated circuit package or other circuit component.

REFERENCES:
patent: 4947233 (1990-08-01), Aso
patent: 6130484 (2000-10-01), Kameda et al.
patent: 6242814 (2001-06-01), Bassett
patent: 6380635 (2002-04-01), Manning et al.
patent: 6717270 (2004-04-01), Downey et al.
patent: 2001/0011768 (2001-08-01), Kohara et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacture thereof with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacture thereof with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacture thereof with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3559636

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.