Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-03-07

2006-03-07

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S499000

Reexamination Certificate

active

07009261

ABSTRACT:
A semiconductor device includes a p−-silicon substrate, n−-epitaxial growth layers on the p−-silicon substrate, a field insulating film at the surface of the n−-epitaxial growth layer, an npn transistor formed at the n−-epitaxial growth layer, an pnp transistor formed at the n−-epitaxial growth layer, a DMOS transistor on the n−-epitaxial growth layer, and a resistance. The DMOS transistor includes an n+-diffusion layer forming a source, a p-type diffusion layer forming a back gate region, a lightly doped n-type diffusion layer forming a drain, and a heavily doped n+-diffusion layer forming the drain.

REFERENCES:
patent: 6359318 (2002-03-01), Yamamoto et al.
patent: 3-104270 (1991-05-01), None
patent: 5-3293 (1993-01-01), None
patent: 8-227945 (1996-09-01), None
patent: 2002-198448 (2002-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3559504