Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S443000, C257S655000
Reexamination Certificate
active
07071504
ABSTRACT:
A semiconductor film into which p-type impurities have been introduced is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.
REFERENCES:
patent: 5841170 (1998-11-01), Adan et al.
patent: 6562669 (2003-05-01), Suzawa et al.
patent: 2000-31493 (2000-01-01), None
patent: 2000-77665 (2000-03-01), None
patent: 2000-349295 (2000-12-01), None
Greer Burns & Crain Ltd.
Louie Wai-Sing
Sharp Kabushiki Kaisha
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