Magnetoresistive random access memory with high selectivity

Details Magnetoresistive random access memory with high selectivity Magnetoresistive random access memory with high selectivity

2006-03-21

2006-03-21

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C365S158000, C365S173000, C365S200000, C365S209000

Reexamination Certificate

active

07015555

ABSTRACT:
A magnetoresistive random access memory is provided. The magnetoresistive random access memory includes a first magnetic layer of which the direction of a magnetic vector is fixed, a second magnetic layer which is positioned in parallel with the first magnetic layer and of which the direction of a magnetic vector is reversible, and a non-magnetic layer interposed between the first and second magnetic layers, the second magnetic layer having an aspect ratio of 2 or less, a thickness of 5 nm or less, and a saturation magnetization of 800 emu/cm3or less. The magnetoresistive random access memory has kink-free, magneto-resistance characteristics, thereby exhibiting high selectivity regardless of process capability.

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European Search Report for EP 04250030.6.

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