Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-04-18
2006-04-18
McPherson, John A. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S314000, C430S316000, C438S447000
Reexamination Certificate
active
07029826
ABSTRACT:
Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
REFERENCES:
patent: 5079300 (1992-01-01), Dubrow et al.
patent: 6042994 (2000-03-01), Yang et al.
patent: 6208014 (2001-03-01), Wu et al.
patent: 6395651 (2002-05-01), Smith et al.
patent: 6410149 (2002-06-01), Hendricks et al.
patent: 2002/0001973 (2002-01-01), Wu et al.
patent: WO 00/02233 (2000-01-01), None
S.V. Nitta, et al., “Surface Modified Spin-On Xerogel Films as Interlayer Dielectrics”, 1999 American Vacuum Society, pp. 205-212.
Drage James S.
Hacker Nigel P.
Thomas Michael
Chacko-Davis Deborah
Honeywell International , Inc.
McPherson John A.
Roberts & Roberts, LLP
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