System-on-chip including DRAM and analog device for...

Details System-on-chip including DRAM and analog device for... System-on-chip including DRAM and analog device for...

2006-07-11

2006-07-11

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000

Reexamination Certificate

active

07075136

ABSTRACT:
Provided is an invention related to a SOC containing a DRAM and an analog device for increasing a capacitance of a capacitor in SOC and a method of fabricating the SOC. Two conductive layers are used for lower electrode in a capacitor for unit cells of the DRAM, and the whole surface of the upper electrode is capped with a second dielectric layer to maximally increase in the contact surface between the dielectric layer and the upper and lower electrodes.

REFERENCES:
patent: 5441915 (1995-08-01), Lee
patent: 6140693 (2000-10-01), Weng et al.
patent: 6696720 (2004-02-01), Sakao
patent: 6717267 (2004-04-01), Kunikiyo
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 10-20010068729 (2001-07-01), None
English language abstract of Korean Publication No. 10-20010068729.

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