Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-05-16

2006-05-16

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

07045895

ABSTRACT:
An object of the present invention is to improve the inter-layer adhesiveness of the diffusion barrier film while maintaining the lower dielectric constant of the diffusion barrier film. A diffusion barrier film for a copper interconnect comprises an insulating material containing silicon, carbon, hydrogen and nitrogen as constituent elements, and also containing Si—H bond, Si—C bond and methylene bond (—CH2—). The insulating material involves I2/I1of not lower than 0.067 and I3/I1of not higher than 0.0067 appeared in an infrared absorption spectrum; where I1is defined as an absorption area of the infrared absorption band having a peak near 810 cm−1, I2is defined as an absorption area of the infrared absorption band having a peak near 2,120 cm−1and I3is defined as an absorption area of the infrared absorption band having a peak near 1,250 cm−1.

REFERENCES:
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6489030 (2002-12-01), Wu et al.
patent: 2002-083870 (2002-03-01), None
patent: 2002-319619 (2002-10-01), None

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