Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-01-10
2006-01-10
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000
Reexamination Certificate
active
06984592
ABSTRACT:
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
REFERENCES:
patent: 5583205 (1996-12-01), Rees, Jr.
patent: 5726294 (1998-03-01), Rees, Jr.
patent: 5874379 (1999-02-01), Joo et al.
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 6030491 (2000-02-01), Vaartstra
patent: 6136995 (2000-10-01), Nabika et al.
patent: 6159855 (2000-12-01), Vaartstra
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207297 (2001-03-01), Sabol et al.
patent: 6258467 (2001-07-01), Subramanian
patent: 6297107 (2001-10-01), Paton et al.
patent: 6348412 (2002-02-01), Vaartstra
patent: 6350686 (2002-02-01), Vaartstra
patent: 6426307 (2002-07-01), Lim
patent: 6528884 (2003-03-01), Lopatin et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6616986 (2003-09-01), Sherman
patent: 6620670 (2003-09-01), Song et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 2002/0013487 (2002-01-01), Norman et al.
patent: 2002/0028570 (2002-03-01), Vaartstra
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 2003/0118725 (2003-06-01), Shin
patent: 0 387 892 (1990-09-01), None
Fukuda et al., “Physical properties and structure of rf-sputtered amorphous films in the system Al2O3-Y2O3,”J. Am. Ceram. Soc., 2002, Apr. 4; 85(4):915-20.
Billman et al., “Alternate Gate Oxides For Silicon Mosfets Using High-K Dielectrics,”Mat. Res. Soc. Symp. Proc., 1999; 567:409-14.
Fukuda et al., “Physical Properties and Structure of rf-Sputtered Amorphous Films in the System Al2O3-Y2O3,”J. Am. Ceram. Soc., 2002; 85(4):915-20.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Rees, Jr. et al., “Structural Characterization of a Tris-Agostic Lanthanoid-H-Si Interaction,”Angew: Chem. Int. Ed. Engl., 1996; 35(4):419-22.
Ritala et al., “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources,”Sciences, 2000; 288:319-21.
Vehkamäki et al., “Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition,”Electrochemical and Solid-State Letters, 1999; 2(10):504-6.
U.S. Appl. No. 10/230,193, filed Aug. 28, 2002.
U.S. Appl. No. 10/229,841, filed Aug. 28, 2002.
Malsawma Lex H.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
Smith Matthew
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