Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S390000, C257S391000, C257S408000
Reexamination Certificate
active
07109553
ABSTRACT:
A semiconductor device which achieves reductions in malfunctions and operating characteristic variations by reducing the gain of a parasitic bipolar transistor, and a method of manufacturing the same are provided. A silicon oxide film (6) is formed partially on the upper surface of a silicon layer (3). A gate electrode (7) of polysilicon is formed partially on the silicon oxide film (6). A portion of the silicon oxide film (6) underlying the gate electrode (7) functions as a gate insulation film. A silicon nitride film (9) is formed on each side surface of the gate electrode (7), with a silicon oxide film (8) therebetween. The silicon oxide film (8) and the silicon nitride film (9) are formed on the silicon oxide film (6). The width (W1) of the silicon oxide film (8) in a direction of the gate length is greater than the thickness (T1) of the silicon oxide film (6).
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Iwamatsu Toshiaki
Maeda Shigenobu
Matsumoto Takuji
Ota Kazunobu
Sayama Hirokazu
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