Semiconductor device having diffusion barrier layer...

Details Semiconductor device having diffusion barrier layer... Semiconductor device having diffusion barrier layer...

Filed on

2006-09-12

Date issued

2006-09-12

Examiner

Geyer, Scott B. (Department: 2812)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257SE27048

Type

Reexamination Certificate

Status

active

Patent number

07105885

Description

ABSTRACT:
A semiconductor device is provided which is capable of preventing a constitutional material of a diffusion barrier layer from diffusing into a bottom electrode during a high thermal process and of preventing an increase in contact resistance of a contact plug by suppressing mutual diffusions of the constitutional material of the diffusion barrier layer and the contact plug and a method for fabricating the same. The semiconductor device includes a bottom electrode of a capacitor connecting to a substrate through a contact plug; a first diffusion barrier layer disposed on the contact plug, wherein the first diffusion barrier contains Cr therein for preventing mutual diffusions between the bottom electrode and the contact plug; and a second diffusion barrier on the first diffusion barrier for preventing the Cr in the first diffusion layer from diffusing into the bottom electrode; a dielectric layer disposed on the bottom electrode and a top electrode disposed on the dielectric layer.

REFERENCES:
patent: 6090697 (2000-07-01), Xing et al.
patent: 6117725 (2000-09-01), Huang
patent: 6180974 (2001-01-01), Okutoh et al.
patent: 6190963 (2001-02-01), Zhang et al.
patent: 6288420 (2001-09-01), Zhang et al.
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6399521 (2002-06-01), Zhang et al.
patent: 2002/0096734 (2002-07-01), Natsume
patent: 2003/0077874 (2003-04-01), Hsu et al.
patent: 12-307071 (2000-11-01), None
patent: 2000-15240 (2000-03-01), None
patent: 2000-42447 (2000-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having diffusion barrier layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having diffusion barrier layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having diffusion barrier layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3553657