Solid-state imaging device with improved image sensitivity

Details Solid-state imaging device with improved image sensitivity Solid-state imaging device with improved image sensitivity

2006-04-04

2006-04-04

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S233000, C257S258000, C438S048000, C438S070000

Reexamination Certificate

active

07023034

ABSTRACT:
The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements1arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive elements for detecting an electrical charge generated by each light-sensitive element; a light-shielding film58coating the plurality of detecting electrodes and having an aperture65over each light-sensitive element; and a plurality of reflecting walls62, which are formed in a grid pattern over the light-shielding film so as to partition the apertures individually over the respective light-sensitive elements, for reflecting a portion of light entering the semiconductor substrate from above onto the aperture on each light-sensitive element. The plurality of reflecting walls are formed so that a middle point of the reflecting walls opposing each other across the aperture is displaced from a center of the aperture toward a center of the photoreceiving region.

REFERENCES:
patent: 4708436 (1987-11-01), Kleinknecht
patent: 6246081 (2001-06-01), Abe
patent: 10-229180 (1998-08-01), None
patent: 11-087674 (1999-03-01), None
patent: 2001-77339 (2001-03-01), None

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