Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-23
2006-05-23
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S109000, C257S774000, C257S775000
Reexamination Certificate
active
07049229
ABSTRACT:
An insulating film having openings larger than viaholes, formed as being aligned with the viaholes, is coated on the back surface of a silicon semiconductor substrate so that the viaholes fall within the openings, a conductive film is then formed so as to fill the viaholes and the openings by plating, vacuum evaporation or a technique using a metal paste, and the conductive film is then cut using a bite to thereby form through electrodes.
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Mizukoshi Masataka
Omote Koji
Fourson George
Fujitsu Limited
Toledo Fernando L.
Westerman Hattori Daniels & Adrian LLP
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