Magnetic memory having synthetic antiferromagnetic pinned layer

Details Magnetic memory having synthetic antiferromagnetic pinned layer Magnetic memory having synthetic antiferromagnetic pinned layer

2006-07-04

2006-07-04

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S087000, C365S097000, C427S548000, C427S599000

Reexamination Certificate

active

07072209

ABSTRACT:
A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense structure. The SAF includes an antiferromagnetic structure adjacent a ferromagnetic seed layer. The ferromagnetic seed layer provides a texture so that the antiferromagnetic structure deposited on the ferromagnetic seed layer has reduced pinning field dispersion.

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