Method for dry etching photomask material

Details Method for dry etching photomask material Method for dry etching photomask material

2006-03-21

2006-03-21

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S313000, C430S314000, C430S318000, C430S323000, C216S067000

Reexamination Certificate

active

07014958

ABSTRACT:
A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibit a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the higher selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.

REFERENCES:
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patent: 5837615 (1998-11-01), Rostoker
patent: 6544894 (2003-04-01), Kobayashi
patent: 2005/0008945 (2005-01-01), Brooks et al.

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