Magnetic memory device having a non-volatile magnetic...

Details Magnetic memory device having a non-volatile magnetic... Magnetic memory device having a non-volatile magnetic...

2006-01-31

2006-01-31

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S158000, C365S171000, C365S173000, C438S692000, C438S741000, C438S745000, C438S754000

Reexamination Certificate

active

06992342

ABSTRACT:
A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.

REFERENCES:
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6724651 (2004-04-01), Hirai

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