Method of manufacturing capacitive type dynamic quantity sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C073S514320

Reexamination Certificate

active

06984541

ABSTRACT:
In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.

REFERENCES:
patent: 6151966 (2000-11-01), Sakai et al.
patent: 6170332 (2001-01-01), MacDonald et al.
patent: 6282960 (2001-09-01), Samuels et al.
patent: 6318177 (2001-11-01), Buchan et al.

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