Semiconductor device formed on (111) surface of a Si crystal...

Details Semiconductor device formed on (111) surface of a Si crystal... Semiconductor device formed on (111) surface of a Si crystal...

2006-03-14

2006-03-14

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000

Reexamination Certificate

active

07012311

ABSTRACT:
A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

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Stephen A. Campbell, 1996. Oxford University Press. The Science and Engineering of Microelectronic Fabrication. pp. 29-31 and 394-396.

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