Ion implanter and method for controlling the same

Details Ion implanter and method for controlling the same Ion implanter and method for controlling the same

2006-01-10

2006-01-10

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492230, C250S252100, C250S397000, C250S398000

Reexamination Certificate

active

06984833

ABSTRACT:
The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.

REFERENCES:
patent: 4539217 (1985-09-01), Farley
patent: 4587433 (1986-05-01), Farley
patent: 5760409 (1998-06-01), Chen et al.
patent: 5814823 (1998-09-01), Benveniste
patent: 5998798 (1999-12-01), Halling et al.
patent: 6020592 (2000-02-01), Liebert
patent: 6297510 (2001-10-01), Farley
patent: 6323497 (2001-11-01), Walther
patent: 6523695 (2003-02-01), Ueta et al.
patent: 6616898 (2003-09-01), Hara et al.
patent: 6657209 (2003-12-01), Halling
patent: 6797967 (2004-09-01), Tse et al.
patent: 2002/0130277 (2002-09-01), Halling
patent: 2004/0022694 (2004-02-01), Hara et al.
patent: 2004/0251432 (2004-12-01), Sano et al.
patent: 0 854 494 (1998-07-01), None
patent: 1 047 103 (2000-10-01), None
patent: 10-2226880 (1998-08-01), None
patent: 2000-11942 (2000-01-01), None
International Publication No. WO 02/025722 A3; published Mar. 28, 2002.

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