Method for fabricating a low temperature polysilicon thin...

Details Method for fabricating a low temperature polysilicon thin... Method for fabricating a low temperature polysilicon thin...

2006-01-31

2006-01-31

Graybill, David (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C438S161000, C438S164000, C438S166000

Reexamination Certificate

active

06991974

ABSTRACT:
A method for fabricating a low temperature polysilicon thin film transistor. The method includes steps of: first, a substrate is provided and a buffer layer is then formed over the substrate. Next, a low surface energy material layer is formed over the buffer layer and then a first amorphous silicon layer is formed on the low surface energy material layer, or on a buffer layer processed by hydrogen plasma. The first amorphous silicon layer is completely melted by a laser annealing step so that the liquid first amorphous silicon layer sequentially transforms into a number of polysilicon seeds being uniformly distributed on the low surface energy material layer. A second amorphous silicon layer is further formed over the low surface energy material layer and covers the polysilicon seeds. The laser annealing step s The second amorphous silicon layer is completely melted after the laser annealing step so that the liquid second amorphous silicon layer sequentially transforms into a polysilicon layer with the associated polysilicon seeds during crystallization.

REFERENCES:
patent: 6818967 (2004-11-01), Chen
patent: 6936505 (2005-08-01), Keys et al.
patent: 2002/0090767 (2002-07-01), Bullock et al.
patent: 2003/0013278 (2003-01-01), Jang et al.
patent: 2004/0188685 (2004-09-01), Lin et al.

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