Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S413000, C257S762000, C257S769000
Reexamination Certificate
active
07012312
ABSTRACT:
A highly reliable semiconductor device having a multilayer structure including an insulating film, an adjacent conductive film, and a main conductive film in which adhesive fractures, voids and disconnections are unlikely to occur. Regarding main constituent elements of the adjacent conductive film and the main conductive film, lattice mismatching is made small, the melting point the adjacent conductive film is set to be not less than 1.4 times that of the main constituent element of the main conductive film, the adjacent conductive film contains at least one different kind of element, the difference between the atomic radius of an added element and that the atomic radius the adjacent conductive film is set to be not more than 10%, and/or bond energy between the added element and silicon (Si) is not less than 1.9 times that of the main constituent element of the adjacent conductive film and silicon (Si).
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Asano Isamu
Iwasaki Tomio
Miura Hideo
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Smoot Stephen W.
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