Semiconductor device of an LDD structure having a floating gate

Details Semiconductor device of an LDD structure having a floating gate Semiconductor device of an LDD structure having a floating gate

1991-10-23

1993-03-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257408, H01L 2968, H01L 2906, H01L 2702

Patent

active

051949245

ABSTRACT:
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors with an LDD structure having a floating gate in memory cells and second field effect transistors with an LDD structure as elements other than memory cells, and which is used as an EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.

REFERENCES:
patent: 4663645 (1987-05-01), Komori et al.

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