Integrated circuits with rhodium-rich structures

Details Integrated circuits with rhodium-rich structures Integrated circuits with rhodium-rich structures

2006-05-02

2006-05-02

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000

Reexamination Certificate

active

07038263

ABSTRACT:
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.

REFERENCES:
patent: 5504041 (1996-04-01), Summerfelt
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5619393 (1997-04-01), Summerfelt et al.
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5729054 (1998-03-01), Summerfelt et al.
patent: 5751540 (1998-05-01), Lee et al.
patent: 5807774 (1998-09-01), Desu et al.
patent: 5844318 (1998-12-01), Sandhu et al.
patent: 5874364 (1999-02-01), Nakabayashi et al.
patent: 5963835 (1999-10-01), Sandhu et al.
patent: 5989338 (1999-11-01), DeBoer et al.
patent: 6046469 (2000-04-01), Yamazaki et al.
patent: 6090701 (2000-07-01), Hasunuma et al.
patent: 6169305 (2001-01-01), Takai et al.
patent: 6177284 (2001-01-01), Horii et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6180974 (2001-01-01), Okutoh et al.
patent: 6232174 (2001-05-01), Nagata et al.
patent: 6482736 (2002-11-01), Basceri et al.
patent: 6518610 (2003-02-01), Yang et al.
patent: 6781175 (2004-08-01), Yang et al.
Kodas et al. “The Chemistry of Metal CVD” (Jan 1994) Chapter 8, pp. 397-398 and 408.
Koops et al.“Fabrication and Characterization of Platinum Nanocrystalline Material Grown By Electron-Beam Induced Deposition” —J. Vac. Sci Technol. B 13(6), Nov/Dec 1995, pp. 2400-2403.
Aoyama et al. “Ru Electrode Deposited by Sputtering in Ar/O2Mixture Ambient”—Japanese J. Appl. Phys. vol 37 (1998) pp. 5701-5707.
Aoyama et al. “Interfacial Layers Between Si and Ru Films Deposited By Sputtering In Ar/O2Mixture Ambient”—1998 Publication Board, Japanese Journal of Applied Physics, pp. L242-244.
PCT International Search Report dated Mar. 21, 2003.
“A Stacked Capacitor Technology with ECR Plasma MOCVD (Ba,Sr)TiO3and RuO2/RU/TiN/TiSixStorage Nodes for G-b-Scale Dram's,” IEEE Transactions on Electron Devices, vol. 44, No. 7, Jul. 1, 1997, pp. 1076-1083.
“Novel High Temperature Multilayer Electrode-Barrier Structure for High-Density Ferroelectric Memories,” Applied Physics Letters, vol. 71, No. 5, Aug. 4, 1997, pp. 719-721.
“Fatigue of Organometallic Chemical Vapor Deposited PbZrxTi1-xO3Thin Films with Ru/RuO2and Pt/Pt electrodes,” Thin Solid Films, vol. 263, No. 2, Jul. 15, 1995, pp. 221-230.

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