Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-04
2006-04-04
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S487000, C438S486000, C438S694000, C438S492000, C438S097000, C438S479000, C438S131000
Reexamination Certificate
active
07022604
ABSTRACT:
A surface-transformation method of forming regions of a second material in a first solid material to control the properties of the first solid material is disclosed. The regions of the second material are formed in the first solid material by drilling holes to a predefined depth and at a predefined lattice position. The holes in the first solid material are then filled with a second material and then the first and second materials are heated to a temperature close to the melting point of the first solid material to spontaneously form the regions filled with the second material and embedded in the first solid material at the desired location. A liquid-phase immersion method or a deposition method may be employed to fill the holes in the first solid material.
REFERENCES:
patent: 4603232 (1986-07-01), Kurland et al.
patent: 5440421 (1995-08-01), Fan et al.
patent: 5689275 (1997-11-01), Moore et al.
patent: 5842195 (1998-11-01), Peters et al.
patent: 5990850 (1999-11-01), Brown et al.
patent: 6070143 (2000-05-01), Barney et al.
patent: 6261469 (2001-07-01), Zakhidov et al.
patent: 6358854 (2002-03-01), Fleming et al.
patent: 6433931 (2002-08-01), Fink et al.
patent: 6476409 (2002-11-01), Iwasaki et al.
patent: 6582512 (2003-06-01), Geusic et al.
patent: 2002/0045030 (2002-04-01), Ozin et al.
patent: WO 99/45489 (1999-09-01), None
patent: WO 00/41110 (2000-07-01), None
Anya Igwe U.
Baumeister B. William
Micro)n Technology, Inc.
LandOfFree
Method of forming spatial regions of a second material in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming spatial regions of a second material in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming spatial regions of a second material in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3542755