Write line design in MRAM

Details Write line design in MRAM Write line design in MRAM

2006-09-12

2006-09-12

Nguyen, VanThu (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C365S158000, C365S171000

Reexamination Certificate

active

07105879

ABSTRACT:
A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

REFERENCES:
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6272041 (2001-08-01), Naji
patent: 6331943 (2001-12-01), Naji et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6960815 (2005-11-01), Yoda et al.
patent: 2002/0034094 (2002-03-01), Saito et al.

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