Semiconductor memory with wordline timing

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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Details

C365S189030, C365S230030, C365S233100

Reexamination Certificate

active

07042775

ABSTRACT:
A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the wordline to be activated. Upon such an isolation signal shifting low and isolating the adjacent memory section, a timing circuit triggers a wordline decoder to activate a select wordline. The timing circuit prevents activation of the wordline decoder until the isolation signal is received.

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