Method for treating wafer surface

Details Method for treating wafer surface Method for treating wafer surface

2006-09-12

2006-09-12

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S674000

Reexamination Certificate

active

07105433

ABSTRACT:
The present invention provides a method for treating the wafer surface, suitable for removing residues on the wafer surface. The method includes forming a photo-sensitive material layer over the wafer surface covering the bumps and the under bump metallurgy layer on the wafer surface. Using the bumps as masks, the photo-sensitive material layer is exposed and developed, to expose the wafer surface between the bumps. A wet etching process is then performed to remove residues on the exposed wafer surface and then the remained photo-sensitive material layer is removed. Therefore, no residues remain on the wafer surface, and the yield of the bumps is increased.

REFERENCES:
patent: 6593220 (2003-07-01), Yu et al.

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