Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-11-08
1996-06-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257374, 257376, 257397, 257398, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055258247
ABSTRACT:
A multi-channel type intelligent power IC which solves the problems of parasitic transistor and increase in an area of isolation region, both of which are inherent problem in a pn junction isolation substrate. The power IC also enhances heat-radiation performance. An n type first semiconductor substrate and p type second semiconductor substrate are directly bonded, and a buried oxide film is formed in a portion of a bonding interface thereof. Subsequently, a plurality of isolation trenches are formed and the first semiconductor substrate is separated into an SOI isolation region and a pn isolation region. Logic elements are then formed in the SOI isolation region, and power elements are formed in the pn isolation region. In the case wherein two or more logic elements are hereby formed, the logic elements are isolated by isolation trenches. In the case wherein two or more power elements are formed, a parasitic current extracting portion is formed between mutual power elements.
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Fujino Seiji
Fukumoto Harutsugu
Himi Hiroaki
Mintel William
Nippondenso Co. Ltd.
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