Nonvolatile magnetic memory device and manufacturing method...

Details Nonvolatile magnetic memory device and manufacturing method... Nonvolatile magnetic memory device and manufacturing method...

2006-01-03

2006-01-03

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C257S421000, C257S200000

Reexamination Certificate

active

06982446

ABSTRACT:
An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.

REFERENCES:
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6587370 (2003-07-01), Hirai
patent: 6849888 (2005-02-01), Ooishi

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