PN junction trench isolation type semiconductor device

Details PN junction trench isolation type semiconductor device PN junction trench isolation type semiconductor device

1995-02-01

1996-06-11

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257333, 257334, 257339, H01L 2910

Patent

active

055258212

ABSTRACT:
There is disclosed a semiconductor device including a plurality of P well regions (4) and a P well region (41) insulated from each other by a plurality of trench isolating layers (10) formed regularly in predetermined spaced relation with each other and having the same depth. The outermost P well region (41) isolatedly formed externally of an outermost trench isolating layer (10A) is made as deep as the trench isolating layers (10) and, accordingly, is made deeper than the P well regions (4) except the outermost P well region (41). This provides for the alleviation of the electric field concentration generated in the bottom edge of the outermost isolating layer of trench structure, thereby achieving the semiconductor device having an improved device breakdown voltage and a method of fabricating the same.

REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 5003372 (1991-03-01), Kim et al.
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5184204 (1993-02-01), Mihara et al.
"Time MOS Depletion-Mode Thyristor: A New MOS-Controlled Bipolar Power Device" Baliga, et al., IEEE Electron Device Letters, vol. 9, No. 8, Aug. 1988, pp. 411-413.
Solid-State Electronics, vol. 33, No. 11, pp. 1459-1466, 1990, J. Akhtar, et al., "Study of Avalanche Multiplication in Planar-Terminated Junctions", pp. 1459-1466.
IEEE Transactions on Electron Devices, vol. 36, No. 9, Sep. 1989, H. R. Chang, et al., "500-V n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure", pp. 1824-1829.

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