Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-08-02
1996-06-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257297, 257306, 365149, 365182, H01L 27108
Patent
active
055258204
ABSTRACT:
A semiconductor memory cell of the present invention comprises a cascade gate including a plurality of cascade-connected MOS transistors and having one end connected to a read/write node, and a plurality of capacitors for information storage connected at one end to said MOS transistors, respectively, at the end remote from said node.
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Crane Sara W.
Kabushiki Kaisha Toshiba
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