Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-04-25
2006-04-25
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S197000, C438S655000, C438S682000
Reexamination Certificate
active
07033916
ABSTRACT:
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A super-saturated doped source silicide metallic layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide metallic layer incorporates a substantially uniformly distributed dopant therein in a substantially uniform super-saturated concentration. The silicide metallic layer is reacted with the semiconductor substrate therebeneath to form a salicide layer and outdiffuse the dopant from the salicide layer into the semiconductor substrate therebeneath. The outdiffused dopant in the semiconductor substrate is then activated to form a shallow source/drain junction beneath the salicide layer. An interlayer dielectric is then deposited above the semiconductor substrate, and contacts are formed in the interlayer dielectric to the salicide layer.
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En William George
Maszara Witold P.
Paton Eric
Pelella Mario M.
Advanced Micro Devices , Inc.
Ishimaru Mikio
Luu Chuong Anh
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