Photoresist composition for deep ultraviolet lithography...

Details Photoresist composition for deep ultraviolet lithography... Photoresist composition for deep ultraviolet lithography...

2006-01-31

2006-01-31

Ashton, Rosemary (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S914000, C522S025000, C554S085000, C568S035000

Reexamination Certificate

active

06991888

ABSTRACT:
The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5,where, R1and R2R5, R6, R7, R8, and R9are defined herein; m=1–5; X−is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3,where R30, R31, R32, R33, and R34are defined herein.

REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
patent: 5021197 (1991-06-01), Takeda et al.
patent: 5320931 (1994-06-01), Umehara et al.
patent: 5350660 (1994-09-01), Urano et al.
patent: 5648196 (1997-07-01), Frechet et al.
patent: 5843624 (1998-12-01), Houlihan et al.
patent: 5879857 (1999-03-01), Chandross et al.
patent: 6180320 (2001-01-01), Saito et al.
patent: 6187504 (2001-02-01), Suwa et al.
patent: 6280898 (2001-08-01), Husegawa et al.
patent: 6420085 (2002-07-01), Nishi et al.
patent: 6479210 (2002-11-01), Kinoshita et al.
patent: 6511783 (2003-01-01), Uenishi
patent: 6517994 (2003-02-01), Watanabe
patent: 6541179 (2003-04-01), Hatakeyama et al.
patent: 2003/0013039 (2003-01-01), Kobayashi et al.
patent: 0 502 382 (1992-09-01), None
patent: 0 789 278 (1997-08-01), None
patent: 97/33198 (1997-09-01), None
patent: 0 877 293 (1998-11-01), None
patent: 1 033 624 (2000-09-01), None
patent: 1 041 442 (2000-10-01), None
patent: 1 045 290 (2000-10-01), None
patent: 1 085 377 (2001-03-01), None
patent: 1 273 970 (2003-01-01), None
patent: 1 179 750 (2003-02-01), None
patent: 2 320 718 (1998-07-01), None
patent: 2 332 679 (1999-06-01), None
patent: 5-152718 (1993-06-01), None
patent: 08-027094 (1996-01-01), None
patent: 10-48814 (1998-02-01), None
patent: 10-319581 (1998-04-01), None
patent: 100097075 (1998-04-01), None
patent: 10-319581 (1998-12-01), None
patent: WO 00/17712 (2000-03-01), None
patent: WO 00/67072 (2000-11-01), None
Kevill, D.N. et al. J.Org.Chem. 59, 1994,6303-6312.
G.A. Olah & E.G. Melby, J. Amer. Chem. Soc., 94(17), Aug. 23, 1972, pp 6620-1.
English language abstract and machine lamnguage translation of claims (from JPO) of JP 10-048814, Feb. 20, 1998.
English language abstract and machine language translation (from JPO) of JP 08-027094, Jan. 30, 1996.
English language copy of Notification of Transmittal of the International Preliminary Examination Report (Form PCT/IPEA/416) for PCT/EP03/06139.
English language copy of International Preliminary Examination Report (Form PCT/IPEA/409) for PCT/EP03/06139.
English language translation (from JPO) for JP 319581.

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