Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

2006-07-04

2006-07-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S320000, C257S321000, C257S325000

Reexamination Certificate

active

07071512

ABSTRACT:
A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.

REFERENCES:
patent: 5596214 (1997-01-01), Endo
patent: 6005270 (1999-12-01), Noguchi
patent: 6342716 (2002-01-01), Morita et al.
patent: 7-326681 (1995-12-01), None
T. Ogura, et al., “Embedded Twin MONOS Flash Memories with 4ns and 15ns Fast Access Times,” 2003 Symposium on VLSI Circuits, Digest of Technical Papers.
H. Iwai, “Subject Toward Practical Application of High-k Gate Insulating Film,” 57th VLSI Forum, VLSI Report, Feb. 23, 2001, pp. 13-28.

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