Method for monitoring ion implant doses

Details Method for monitoring ion implant doses Method for monitoring ion implant doses

2006-04-18

2006-04-18

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C324S754120

Reexamination Certificate

active

07029933

ABSTRACT:
Both the sensitivity and the reproducibility of processes for measuring low density ion implant doses near a semiconductor surface have been improved by first forming a thermal oxide layer on the surface and then adjusting the implant profile so that it peaks at the semiconductor-oxide interface. Additionally, variations in the initial wafer surface condition have been minimized by controlling the charging dose and sequence prior to performing the measurements.

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“Non-contact, In-line Monitoring of Low Dose and Low Energy Ion Implantation,” by Santiesteban et al., Lucent Tech., Orlando, Fl.
“Determination of surface space charge capacitance using a light probe,” by E. Kamieniecki, pp. 811-814, J. Vac. Sci-Technol., 20 (3), Mar. 1982, 1982 American Vacuum Society.

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