Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-25
2006-04-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S310000
Reexamination Certificate
active
07034369
ABSTRACT:
A gate insulating film on a silicon substrate includes a SiO2film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6794764 (2004-09-01), Kamal et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 6812514 (2004-11-01), Yang et al.
patent: 6930335 (2005-08-01), Yamaguchi et al.
patent: 6949433 (2005-09-01), Hidehiko et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2004-031760 (2004-01-01), None
Manchanda et al., “Si-Doped Aluminates for High Temperature Metal-Gate CMOS: Zr-Al-Si-O, A Novel Gate Dielectric for Low Power Applications”, Dec. 10-13, 2000, pp. 23-26,Electron Devices Meeting, 2000. IEDM Technical Digest. International.
Manchanda et al., “High K Dielectrics for the Silicon Industry”, Nov. 1-2, 2001 Page(s):56-60, Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on □□.
Yu et al., “Energy Gap and Band Alignment for (HfO2)x(Al2O3)1 −xon (100) Si”,Proceedings of Applied Physics Letters, 2002, vol. 81, No. 2, pp. 376-378.
Zhu et al., “HfO2and HfA1O for CMOS: Thermal Stability and Current Transport”,Proceedings of IEDM 01, 2001, pp. 463-466.
Rotondaro et al., “Advanced CMOS Transistors With a Novel HfSiON Gate Dielectric”,Proceedings of 2002 Symposium On VLSI Technology Digest of Technical Papers, pp. 148-149.
Inumiya et al., “Fabrication of HfSiON Gate Dielectrics by Plasma Oxidation and Nitridation, Optimized for 65 nm node Low Power CMOS Applications”,Proceedings of 2003 Symposium On VLSI Technology Digest of Technical Papers, pp. 17-18.
Watanabe et al., “Design Guideline of HfSiON Gate Dielectrics for 65 nm CMOS Generation”,Proceedings of 2003 Symposium On VLSI Technology Digest of Technical Papers, pp. 19-20.
Morioka et al., “High Mobility MISFET With Low Trapped Charge in HfSiO Films”,Proceedings of 2003 Symposium On VLSI Technology Digest of Technical Papers, pp. 165-166.
Arikado Tsunetoshi
Kawahara Takaaki
Kitajima Hiroshi
Miyazaki Seiichi
Torii Kazuyoshi
Jackson Jerome
Kabushiki Kaisha Toshiba
Landau Matthew C
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